SIA517DJ-T1-GE3 datasheet(6/12 Pages) VISHAY

Part #	SIA517DJ-T1-GE3

Description	N- and P-Channel 12-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 64832

S09-0861-Rev. A, 18-May-09

Vishay Siliconix

SiA517DJ

New Product

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

3

6

9

12

15

0

255075

100

125

150

Package Limited

TC - Case Temperature (°C)

Power Derating

0

2

4

6

8

25

50

75

100

125

150

TC - Case Temperature (°C)

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SIA517DJ-T1-GE3 Datasheet(PDF) 6 Page - Vishay Siliconix

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