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FS10ASJ-03 Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor |
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FS10ASJ-03 Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor |
1 / 4 page Feb.1999 FS10ASJ-03 OUTLINE DRAWING Dimensions in mm MP-3 MITSUBISHI Nch POWER MOSFET FS10ASJ-03 HIGH-SPEED SWITCHING USE APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. V V A A A A A W °C °C g 30 ±20 10 40 10 10 40 20 –55 ~ +150 –55 ~ +150 0.26 VGS = 0V VDS = 0V L = 30 µH Typical value Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — Symbol MAXIMUM RATINGS (Tc = 25 °C) Parameter Conditions Ratings Unit 6.5 2.3 0.9MAX. 2.3 1.0 0.5 ± 0.1 0.5 ± 0.2 0.8 5.0 ± 0.2 A q GATE w DRAIN e SOURCE r DRAIN wr q qwe r e ¡4V DRIVE ¡VDSS ................................................................................. 30V ¡rDS (ON) (MAX) ............................................................. 75m Ω ¡ID ........................................................................................ 10A ¡Integrated Fast Recovery Diode (TYP.) ............ 35ns |
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