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NLU1G08 Datasheet(PDF) 3 Page - ON Semiconductor

Part # NLU1G08
Description  Single 2-Input AND Gate
Download  8 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NLU1G08 Datasheet(HTML) 3 Page - ON Semiconductor

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NLU1G08
http://onsemi.com
3
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Conditions
VCC
(V)
TA = 25 5C
TA = +855C
TA = -555C to
+125
5C
Unit
Min
Typ
Max
Min
Max
Min
Max
VIH
Low-Level
Input Voltage
1.65
0.75 x
VCC
0.75 x
VCC
V
2.3 to
5.5
0.70 x
VCC
0.70 x
VCC
VIL
Low-Level
Input Voltage
1.65
0.25 x
VCC
0.25 x
VCC
0.25 x
VCC
V
2.3 to
5.5
0.30 x
VCC
0.30 x
VCC
0.30 x
VCC
VOH
High-Level
Output Voltage
VIN = VIH or VIL
IOH = -50 mA
2.0
3.0
4.5
1.9
2.9
4.4
2.0
3.0
4.5
1.9
2.9
4.4
1.9
2.9
4.4
V
VIN = VIH or VIL
IOH = -4 mA
IOH = -8 mA
3.0
4.5
2.58
3.94
2.48
3.80
2.34
3.66
V
VOL
Low-Level
Output Voltage
VIN = VIH or VIL
IOL = 50 mA
2.0
3.0
4.5
0
0
0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
VIN = VIH or VIL
IOL = 4 mA
IOL = 8 mA
3.0
4.5
0.36
0.36
0.44
0.44
0.52
0.52
IIN
Input Leakage
Current
0
v VIN v 5.5 V
0 to
5.5
±0.1
±1.0
±1.0
mA
ICC
Quiescent
Supply Current
0
v VIN v VCC
5.5
1.0
10
40
mA
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 nS)
Symbol
Parameter
VCC
(V)
Test
Condition
TA = 25 5C
TA = +855C
TA = -555C to
+125
5C
Unit
Min
Typ
Max
Min
Max
Min
Max
tPLH,
tPHL
Propagation Delay,
Input A or B to
Output Y
3.0 to
3.6
CL = 15 pF
4.1
8.8
10.5
12.5
ns
CL = 50 pF
5.9
12.3
14
16.5
4.5 to
5.5
CL = 15 pF
3.5
5.9
7.0
9.0
CL = 50 pF
4.2
7.9
9.0
11
CIN
Input Capacitance
5.5
10
10
10
pF
CPD
Power Dissipation
Capacitance
(Note 3)
5.0
11
pF
3. CPD is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without
load. Average operating current can be obtained by the equation ICC(OPR) = CPD • VCC • fin + ICC. CPD is used to determine the no-load
dynamic power consumption: PD = CPD • VCC2 • fin + ICC • VCC.


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