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NDP11N50ZG Datasheet(PDF) 5 Page - ON Semiconductor |
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NDP11N50ZG Datasheet(HTML) 5 Page - ON Semiconductor |
5 / 7 page NDF11N50Z, NDP11N50Z http://onsemi.com 5 TYPICAL CHARACTERISTICS 0.01 0.1 1 10 100 0.1 1 10 100 1000 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 12. Maximum Rated Forward Biased Safe Operating Area NDF11N50Z VGS v 30 V SINGLE PULSE TC = 25°C 10 ms 100 ms 10 ms dc 1 ms RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.01 0.1 1 10 PULSE TIME (s) DUTY CYCLE = 0.5 SINGLE PULSE Figure 13. Thermal Impedance (Junction−to−Case) for NDF11N50Z RqJC = 3.4°C/W Steady State 0.2 0.1 0.05 0.02 0.01 1E−06 1E−05 1E−04 1E−03 1E−02 1E−01 1E+00 1E+01 1E+02 1E+03 LEADS HEATSINK 0.110″ MIN Figure 14. Isolation Test Diagram Measurement made between leads and heatsink with all leads shorted together. *For additional mounting information, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. |
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