NDF10N62ZG datasheet(3/6 Pages) ONSEMI

Part #	NDF10N62ZG

Description	N-Channel Power MOSFET 620 V, 0.65 ?

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Manufacturer	ONSEMI [ON Semiconductor]

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NDF10N62Z, NDP10N62Z

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TYPICAL CHARACTERISTICS

6.0 V

5.8 V

5.4 V

5.0 V

5.6 V

6.2 V

6.4 V

6.6 V

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

VGS, GATE−TO−SOURCE VOLTAGE (V)

24

20

16

12

8

4

0

2

4

8

10

14

18

20

8

7

6

5

4

3

2

0

2

6

8

10

14

18

20

Figure 3. On−Resistance vs. Gate Voltage

Figure 4. On−Resistance vs. Drain Current

and Gate Voltage

VGS, GATE−TO−SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

10

9

8

7

6

5

0.60

0.65

0.70

0.75

0.80

12.5

10

7.5

5.0

2.5

0.60

0.65

0.70

0.75

0.80

Figure 5. On−Resistance Variation with

Temperature

Figure 6. BVDSS Variation with Temperature

TJ, JUNCTION TEMPERATURE (°C)

125

100

75

50

25

0

−25

−50

0.2

0.7

1.2

1.7

2.2

2.7

6

12

16

TJ = 25°C

VGS = 15 V

10 V

7.0 V

4

12

16

TJ = 25°C

TJ = −55°C

TJ = 150°C

VDS = 30 V

TJ = 25°C

ID = 5 A

TJ = 25°C

VGS = 10 V

150

ID = 5 A

VGS = 10 V

TJ, JUNCTION TEMPERATURE (°C)

150

125

100

75

25

0

−25

−50

0.95

1.0

1.05

1.15

50

ID = 1 mA

1.1

0.9

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