NDF08N50Z datasheet(2/6 Pages) ONSEMI

Part #	NDF08N50Z

Description	N-Channel Power MOSFET 500 V, 0.69

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Manufacturer	ONSEMI [ON Semiconductor]

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NDF08N50Z, NDP08N50Z

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THERMAL RESISTANCE

Parameter

Symbol

NDF08N50Z

NDP08N50Z

Unit

Junction−to−Case (Drain)

RqJC

4.0

1.0

°C/W

Junction−to−Ambient Steady State (Note 3)

RqJA

50

3. Insertion mounted

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Test Conditions

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

VGS = 0 V, ID = 1 mA

BVDSS

500

V

Breakdown Voltage Temperature

Coefficient

Reference to 25°C,

ID = 1 mA

DBVDSS/

DTJ

0.6

V/°C

Drain−to−Source Leakage Current

VDS = 500 V, VGS = 0 V

25°C

IDSS

1

mA

150°C

50

Gate−to−Source Forward Leakage

VGS = ±20 V

IGSS

±10

mA

ON CHARACTERISTICS (Note 4)

Static Drain−to−Source

On−Resistance

VGS = 10 V, ID = 3.6 A

RDS(on)

0.69

0.85

W

Gate Threshold Voltage

VDS = VGS, ID = 100 mA

VGS(th)

3.0

4.5

V

Forward Transconductance

VDS = 15 V, ID = 3.75 A

gFS

6.0

S

DYNAMIC CHARACTERISTICS

Input Capacitance

VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

Ciss

912

pF

Output Capacitance

Coss

120

Reverse Transfer Capacitance

Crss

27

Total Gate Charge

VDD = 250 V, ID = 7.5 A,

VGS = 10 V

Qg

31

nC

Gate−to−Source Charge

Qgs

6.2

Gate−to−Drain (“Miller”) Charge

Qgd

17

Plateau Voltage

VGP

6.3

V

Gate Resistance

Rg

3.0

W

RESISTIVE SWITCHING CHARACTERISTICS

Turn−On Delay Time

VDD = 250 V, ID = 7.5 A,

VGS = 10 V, RG = 5 W

td(on)

13

ns

Rise Time

tr

23

Turn−Off Delay Time

td(off)

31

Fall Time

tf

29

SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted)

Diode Forward Voltage

IS = 7.5 A, VGS = 0 V

VSD

1.6

V

Reverse Recovery Time

VGS = 0 V, VDD = 30 V

IS = 7.5 A, di/dt = 100 A/ms

trr

295

ns

Reverse Recovery Charge

Qrr

1.85

mC

4. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.

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