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NDD03N50ZT4G Datasheet(PDF) 4 Page - ON Semiconductor |
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NDD03N50ZT4G Datasheet(HTML) 4 Page - ON Semiconductor |
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4 / 8 page  NDD03N50Z http://onsemi.com 4 0.1 1 10 0 50 100 150 200 250 300 350 400 450 500 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Drain−to−Source Leakage Current versus Voltage TJ = 150°C TJ = 125°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 8. Capacitance Variation TJ = 25°C VGS = 0 V f = 1 MHz Ciss Coss Crss 0 50 100 150 200 250 300 0 2 4 6 8 10 12 0123456789 10 11 Qg, TOTAL GATE CHARGE (nC) Figure 9. Gate−to−Source Voltage and Drain−to−Source Voltage versus Total Charge QT QGD QGS VDS = 250 V ID = 2.6 A TJ = 25°C VDS VGS 1 10 100 1000 1 10 100 RG, GATE RESISTANCE (W) Figure 10. Resistive Switching Time Variation versus Gate Resistance VDD = 250 V ID = 2.6 A VGS = 10 V td(off) tf tr td(on) 0.1 1.0 10.0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 125°C TJ = 150°C 25°C −55°C VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 11. Diode Forward Voltage versus Current 0 50 100 150 200 250 300 350 400 450 500 550 600 0.01 0.1 1 10 100 |
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