NCV8440STT1G datasheet(5/8 Pages) ONSEMI

Part #	NCV8440STT1G

Description	Protected Power MOSFET 2.6 A, 52 V, N?묬hannel, Logic Level, Clamped MOSFET w/ ESD Protection

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NCV8440

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TYPICAL PERFORMANCE CURVES

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

TJ = 25°C

TJ = −40°C

2.4 V

3.4 V

3.6 V

3.8 V

VDS ≥ 10 V

VGS = 10 V

TJ = 150°C

2.6 V

2.8 V

3 V

3.2 V

TJ = 25°C

VGS, GATE−TO−SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

−40°C

25°C

150°C

−40°C, VGS = 5 V

−40°C, VGS = 10 V

25°C, VGS = 5 V

25°C, VGS = 10 V

150°C, VGS = 5 V

50

100

150

200

250

300

350

34

56

789

10

50

100

150

200

250

300

135

7

9

150°C, VGS = 10 V

ID = 2 A

0

2

4

6

8

10

0123

45

4 V

5 V

0

2

4

6

8

10

1

1.5

2

2.5

3

4

3.5

246

8

10

Figure 1. Single Pulse Maximum Switch−off

Current vs. Load Inductance

L, LOAD INDUCTANCE (mH)

100

10

1

0.1

1

10

150°C

100°C

25°C

Figure 2. Single Pulse Maximum Switching

Energy vs. Load Inductance

L, LOAD INDUCTANCE (mH)

100

10

1

0.1

10

100

150°C

100°C

25°C

Figure 3. On−State Output Characteristics

Figure 4. Transfer Characteristics

Figure 5. RDS(on) vs. Gate−Source Voltage

Figure 6. RDS(on) vs. Drain Current

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ON Semiconductor	NCV8440STT1G	89Kb / 9P	Protected Power MOSFET May, 2016 ??Rev. 7

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