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NCV7321D11R2G Datasheet(PDF) 3 Page - ON Semiconductor |
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NCV7321D11R2G Datasheet(HTML) 3 Page - ON Semiconductor |
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3 / 12 page  NCV7321 http://onsemi.com 3 TYPICAL APPLICATION GND 8 3 6 1 2 4 5 7 VBB INH LIN WAKE RxD TxD EN GND VCC bat 3.3/5V VBAT LIN WAKE GND KL30 LIN− BUS KL31 ECU PD20070503.1 Figure 2. Typical Application Diagram for a Master Node Table 2. PIN DESCRIPTION Pin Name Description 1 RxD Receive Data Output; Low in Dominant State; Open−Drain Output 2 EN Enable Input, Transceiver in Normal Operation Mode when High, Pulldown Resistor to GND 3 WAKE High Voltage Digital Input Pin to Apply Local Wakeup, Sensitive to Falling Edge, Pullup Current Source to VBB 4 TxD Transmit Data Input, Low for Dominant State, Pulldown to GND (Switchable Strength for Wakeup Source Recognition) 5 GND Ground 6 LIN LIN Bus Output/Input 7 VBB Battery Supply Input 8 INH Inhibit Output, Switch Between INH and VBB can be Used to Control External Regulator or Pullup Resistor on LIN Bus Table 3. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Min Typ Max Unit VBB Voltage on Pin VBB −0.3 +45 V VLIN LIN Bus Voltage −45 +45 V VWAKE DC Voltage on WAKE Pin −35 +45 V VINH DC Voltage on INH Pin −0.3 VBB + 0.3 V V_Dig_IO DC Input Voltage on Pins (EN, RxD, TxD −0.3 +45 V TJ Maximum Junction Temperature −40 +150 °C VESD HBM (All Pins) (Note 4) −4 +4 kV CDM (All Pins) (Note 5) −750 +750 V Version NCV7321D10: HBM (LIN, INH, VBB, WAKE) (Note 6) System HBM (LIN, VBB, WAKE) (Note 7) −5 −5 +5 +5 kV kV Version NCV7321D11: HBM (LIN, INH, VBB, WAKE) (Note 6) System HBM (VBB, WAKE) (Note 8) System HBM (LIN) (Note 8) −8 −7 −13 +8 +7 +13 kV kV kV Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 4. Equivalent to discharging a 100 pF capacitor through a 1.5 kW resistor conform to MIL STD 883 method 3015.7. 5. Charged device model test according to ESD STM5.3.1−1999. 6. Equivalent to discharging a 100 pF capacitor through a 1.5 kW resistor referenced to GND. 7. Equivalent to discharging a 150 pF capacitor through a 330 W resistor. 220 nF filter on LIN pin. System HBM levels are verified by an external test−house. 8. Equivalent to discharging a 150 pF capacitor through a 330 W resistor. No filter on LIN pin. System HBM levels are verified by an external test−house. |
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