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NCS2566DTBR2G Datasheet(PDF) 4 Page - ON Semiconductor |
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NCS2566DTBR2G Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 13 page NCS2566 http://onsemi.com 4 MAXIMUM RATINGS Parameter Symbol Rating Unit Power Supply Voltages VCC −0.3 v VCC v 5.5 Vdc Input Voltage Range VI −0.3 v VI v VCC Vdc Input Differential Voltage Range VID −0.3 v VI v VCC Vdc Output Current Per Channel IO 50 mA Maximum Junction Temperature (Note 1) TJ 150 °C Operating Ambient Temperature TA −40 to +85 °C Storage Temperature Range Tstg −60 to +150 °C Power Dissipation PD (See Graph) mW Thermal Resistance, Junction−to−Air RqJA 125 °C/W ESD Protection Voltage Vesd >8000 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded. MAXIMUM POWER DISSIPATION The maximum power that can be safely dissipated is limited by the associated rise in junction temperature. For the plastic packages, the maximum safe junction temperature is 150 °C. If the maximum is exceeded momentarily, proper circuit operation will be restored as soon as the die temperature is reduced. Leaving the device in the “overheated” condition for an extended period can result in device burnout. To ensure proper operation, it is important to observe the derating curves. Figure 2. Power Dissipation vs Temperature 0 200 400 600 800 1000 1200 1400 0 10 20304050 607080 90100 TEMPERATURE (°C) 1800 1600 −40 −30−20−10 |
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