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NCP5387MNR2G Datasheet(PDF) 11 Page - ON Semiconductor |
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NCP5387MNR2G Datasheet(HTML) 11 Page - ON Semiconductor |
11 / 37 page NCP5387 http://onsemi.com 11 ELECTRICAL CHARACTERISTICS (Unless otherwise stated: 0 °C < TA < 85°C; 4.75 V < VCC < 5.25 V; All DAC Codes; CVCC = 0.1 mF) Parameter Units Max Typ Min Test Conditions Modulators (PWM Comparators) Minimum Pulse Width (Note 3) Fs = 800 kHz − 30 40 ns Propagation Delay (Note 3) − 20 − ns Magnitude of the PWM Ramp − 1.0 − V 0% Duty Cycle COMP voltage when the PWM outputs remain LOW − 1.3 − V 100% Duty Cycle COMP voltage when the PWM outputs remain HIGH − 2.3 − V PWM Linear Duty Cycle (Note 3) − 90 − % PWM Phase Angle Error −15 − 15 ° VR_RDY (Power Good) Output VR_RDY Saturation Voltage IVR_RDY = 10 mA − − 0.4 V VR_RDY Rise Time External pullup of 680 k W to 1.25 V, CL = 45 pF, DVo = 10% to 90% − − 150 ns VR_RDY High – Output Leakage Current VR_RDY = 5.0 V − − 1.0 mA VR_RDY Upper Threshold Voltage VCORE increasing, DAC = 1.3 V − 300 − mV below DAC VR_RDY Lower Threshold Voltage VCORE decreasing, DAC = 1.3 V − 350 − mV below DAC VR_RDY Rising Delay VCORE increasing − − 3 ms VR_RDY Falling Delay VCORE decreasing − − 250 ns PWM Outputs Output High Voltage Sourcing 500 mA 3.0 − VCC V Output Low Voltage Sinking 500 mA − − 0.15 V Rise Time CL = 20 pF, DVo = 0.3 to 2.0 V − − 20 ns Fall Time CL = 20 pF, DVo = Vmax to 0.7 V − − 20 ns Tri−State Output Leakage Gx = 2.5 V, x = 1 − 4 − − 1.5 mA Output Impedance − Sourcing Max Resistance to VCC − 320 − W Output Impedance − Sinking Max Resistance to GND − 140 − W 2/3/4 Phase Detection Gate Pin Source Current − 84 − mA Gate Pin Threshold Voltage − 225 − mV Phase Detect Timer − 20 − ms DRVON Output High Voltage Sourcing 500 mA 3.0 − VCC V Output Low Voltage Sinking 500 mA − − 0.7 mV Rise Time CL (PCB) = 20 pF, DVo = 10% to 90% − 24 30 ns Fall Time CL = 20 pF, DVo = 10% to 90% − 11 20 ns Internal Pulldown Resistance − 70 − k W |
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