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RTT 1% 0.05 W (Optional) CO 220 µF (Required) VO RSET [A] 1% 0.05 W (Required) CI 330 µF (Required) RUVLO 1% 0.05 W (Opional) VOAdj TurboTranst VI PTH08T220W CI2 22 µF (Required) VI 2 5 9 + 8 Track GND TT 4 3 GND GND +Sense 6 L O A D −Sense GND + 11 Inhibit INH/UVLO Track 10 7 −Sense +Sense Vo SYNC 1 SmartSync UDG−05098 RTT 1% 0.05 W (Optional) CO 300 µF (Required) VO RSET [A] 1% 0.05 W (Required) CI 300 µF (Required) RUVLO 1% 0.05 W (Opional) VOAdj TurboTranst VO VI PTH08T221W 5 9 8 VI Track GND TT 4 3 GND GND +Sense 6 L O A D −Sense GND Inhibit INH/UVLO Track 10 7 −Sense +Sense SYNC 1 SmartSync 2 11 SLTS252K – NOVEMBER 2005 – REVISED JUNE 2009................................................................................................................................................... www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. PTH08T220W A. RSET required to set the output voltage to a value higher than 0.69 V. See Electrical Characteristics table. PTH08T221W - Ceramic Capacitor Version A. RSET required to set the output voltage to a value higher than 0.69 V. See Electrical Characteristics table. B. 300 µF of ceramic or 330 µF of electrolytic input capacitance is required for proper operation. 2 Copyright © 2005–2009, Texas Instruments Incorporated Product Folder Link(s): PTH08T220W PTH08T221W |
