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CSD16340Q3 Datasheet(PDF) 1 Page - Texas Instruments |
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CSD16340Q3 Datasheet(HTML) 1 Page - Texas Instruments |
1 / 9 page 1 D 2 D 3 D 4 D D 5 G 6 S 7 S 8 S P0095-01 Qg − GateCharge − nC 0 1 4 7 0 2 4 6 8 10 12 G003 3 2 5 6 8 ID =20A V =12.5V DS VGS − GatetoSourceVoltage − V 0 2 4 6 8 10 12 14 16 0 3 4 7 8 9 10 G006 5 6 1 2 ID =20A TC =125 C ° TC =25 C ° CSD16340Q3 www.ti.com SLPS247A – DECEMBER 2009 – REVISED JANUARY 2010 N-Channel NexFET™ Power MOSFETs Check for Samples: CSD16340Q3 1 FEATURES PRODUCT SUMMARY 2 • Optimized for 5V Gate Drive VDS Drain to Source Voltage 25 V • Resistance Rated at VGS = 2.5V Qg Gate Charge Total (4.5V) 6.5 nC • Ultra Low Qg and Qgd Qgd Gate Charge Gate to Drain 1.2 nC • Low Thermal Resistance VGS = 2.5V 6.1 m Ω RDS(on) Drain to Source On Resistance VGS = 4.5V 4.3 m Ω • Avalanche Rated VGS = 8V 3.8 m Ω • Pb Free Terminal Plating Vth Threshold Voltage 0.85 V • RoHS Compliant • Halogen Free • SON 3.3mm x 3.3mm Plastic Package ORDERING INFORMATION Device Package Media Qty Ship APPLICATIONS SON 3.3 × 3.3 13-inch Tape and CSD16340Q3 2500 Plastic Package reel Reel • Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing Systems ABSOLUTE MAXIMUM RATINGS • Optimized for Control or Synchronous FET TA = 25°C unless otherwise stated VALUE UNIT Applications VDS Drain to Source Voltage 25 V VGS Gate to Source Voltage +10 / –8 V DESCRIPTION Continuous Drain Current, TC = 25°C 60 A ID The NexFET™ power MOSFET has been designed Continuous Drain Current(1) 21 A to minimize losses in power conversion and optimized IDM Pulsed Drain Current, TA = 25°C (2) 115 A for 5V gate drive applications. PD Power Dissipation(1) 3 W TJ, Operating Junction and Storage Top View –55 to 150 °C TSTG Temperature Range Avalanche Energy, single pulse EAS 80 mJ ID = 40A, L = 0.1mH, RG = 25Ω (1) Typical RθJA = 39°C/W on 1in 2 Cu (2 oz.) on 0.060" thick FR4 PCB. (2) Pulse width ≤300μs, duty cycle ≤2% RDS(ON) vs VGS Gate Charge 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2 NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Copyright © 2009–2010, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
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