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ES3C Datasheet(PDF) 1 Page - Gulf Semiconductor |
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ES3C Datasheet(HTML) 1 Page - Gulf Semiconductor |
1 / 2 page ES3A THRU ES3J SURFACE MOUNT FAST ULTRAFAST RECTIFIER VOLTAGE: : : :50 TO 600V CURRENT: : : :3.0A FEATURE SMC/ / / /DO-214AB Ideal for surface mount pick and place application Low profile package Built-in strain relief High surge capability High temperature soldering guaranteed 260℃/10sec/at terminals Glass passivated chip Ultrafast recovery time for high efficiency MECHANICAL DATA Terminal:Solder plated, solderable per MIL-STD-750, Method 2026 Case:JEDEC DO-214AB molded plastic body over passivated chip Polarity:color band denotes cathode Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (single-phase, half-wave, 60HZ, resistive or inductive load rating at 25℃, unless otherwise stated, for capacitive load, derate current by 20%) SYMBOL ES3A ES3B ES3C ES3D ES3G ES3J units Maximum Recurrent Peak Reverse Voltage Vrrm 50 100 150 200 400 600 V Maximum RMS Voltage Vrms 35 70 105 140 280 420 V Maximum DC blocking Voltage Vdc 50 100 150 200 400 600 V Maximum Average Forward Rectified at TL =100℃ If(av) 3.0 A Peak Forward Surge Current 8.3ms single half sine- wave superimposed on rated load Ifsm 100.0 A Maximum Instantaneous Forward Voltage at rated forward current 3.0A Vf 0.90 1.25 1.7 V Maximum DC Reverse Current Ta =25℃ at rated DC blocking voltage Ta =100℃ Ir 10.0 500.0 µ A Maximum Reverse Recovery Time (Note1 ) Trr 20 25 35 nS Typical Junction Capacitance (Note 2) Cj 45.0 pF Typical Thermal Resistance (Note 3) Rth(jl) 12.0 /W ℃ Storage and Operating Junction Temperature Tstg, Tj -55 to +150 ℃ Note: 1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A 2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc 3. Thermal Resistance from Junction to terminal mounted on 5×5mm copper pad area Rev.A2 www.gulfsemi.com |
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