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1N5401GM Datasheet(PDF) 1 Page - Gulf Semiconductor |
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1N5401GM Datasheet(HTML) 1 Page - Gulf Semiconductor |
1 / 2 page 1N5400GM THRU 1N5408GM GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE: 50V to 1000V CURRENT: 3.0A FEATURE DO - 201AD Molded case feature for auto insertion High current capability Low leakage current High surge capability High temperature soldering guaranteed 250°C /10sec/0.375" lead length at 5 lbs tension Glass Passivated chip MECHANICAL DATA Terminal: Plated axial leads solderable per MIL-STD 202E, method 208C Case: Molded with UL-94 Class V-0 recognized Flame Retardant Epoxy Polarity: color band denotes cathode Mounting position: any Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated, for capacitive load, derate current by 20%) Symbol 1N5 400 GM 1N5 401 GM 1N5 402 GM 1N5 403 GM 1N5 404 GM 1N5 405 GM 1N5 406 GM 1N5 407 GM 1N5 408 GM units Maximum Recurrent Peak Reverse Voltage Vrrm 50 100 200 300 400 500 600 800 1000 V Maximum RMS Voltage Vrms 35 70 140 210 280 350 420 560 700 V Maximum DC blocking Voltage Vdc 50 100 200 300 400 500 600 800 1000 V Maximum Average Forward Rectified Current 3/8" lead length at TL =105°C If(av) 3.0 A Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load Ifsm 125 A Maximum Instantaneous Forward Voltage at rated forward current Vf 1.1 V Maximum full load reverse current full cycle at TL =75°C Ir(av) 30.0 µ A Maximum DC Reverse Current Ta =25°C at rated DC blocking voltage Ta =100°C Ir 5.0 300.0 µ A Typical Junction Capacitance (Note 1) Cj 40 pF Operating Temperature (Note 2) Rth(ja) 30 °C/W Storage and Operating Junction Temperature Tstg, Tj -55 to +150 °C Note: 1. Measured at 1.0 MHz and applied voltage of 4.0Vdc 2. Thermal Resistance from Junction to Ambient at 0.375" lead length, P.C. Board Mounted Rev.A1 www.gulfsemi.com |
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