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1EJG Datasheet(PDF) 1 Page - Gulf Semiconductor |
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1EJG Datasheet(HTML) 1 Page - Gulf Semiconductor |
1 / 2 page 1EDG THRU 1EJG ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGE: 200 TO 600V CURRENT: 1.0A FEATURE R-1 Molded case feature for auto insertion High current capability Low leakage current High surge capability High temperature soldering guaranteed 250°C /10sec/0.375" lead length at 5 lbs tension Glass Passivated chip MECHANICAL DATA Terminal: Plated axial leads solderable per MIL-STD 202E, method 208C Case: Molded with UL-94 Class V-0 recognized Flame Retardant Epoxy Polarity: color band denotes cathode Mounting position: any Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated, for capacitive load, derate current by 20%) SYMBOL 1EDG 1EGG 1EJG units Maximum Recurrent Peak Reverse Voltage Vrrm 200 400 600 V Maximum RMS Voltage Vrms 140 280 420 V Maximum DC blocking Voltage Vdc 200 400 600 V Maximum Average Forward Rectified Current 3/8 " lead length at Ta =25°C If(av) 1.0 A Peak Forward Surge Current 8.3ms single Half sine-wave superimposed on rated load Ifsm 30.0 A Maximum Instantaneous Forward Voltage at rated forward current Vf 1.0 1.3 1.8 V Maximum full load reverse current full cycle at TL =75°C Ir(av) 50.0 µ A Maximum DC Reverse Current Ta =25 °C at rated DC blocking voltage Ta =100 °C Ir 10.0 100.0 µ A µ A Typical Junction Capacitance (Note 1) Cj 15.0 pF Maximum Reverse Recovery Time (Note 2) Trr 35 nS Operating Temperature (Note 3) R(ja) 50.0 °C /W Storage and Operation Junction Temperature Tstg, Tj -55 to +150 °C Note: 1. Measured at 1.0 MHz and applied voltage of 4.0Vdc 2. Test Condition If =0.5A, Ir =1.0A, Irr =0.25A 3. Thermal Resistance from Junction to Ambient at 0.375" lead length, P.C. Board Mounted Rev.A4 www.gulfsemi.com |
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