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BQ24725RGRT Datasheet(PDF) 7 Page - Texas Instruments |
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BQ24725RGRT Datasheet(HTML) 7 Page - Texas Instruments |
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7 / 39 page  bq24725 www.ti.com SLUS702 – JULY 2010 ELECTRICAL CHARACTERISTICS (continued) 4.5 V ≤ VVCC ≤ 24 V, 0°C ≤ TJ ≤ 125°C, typical values are at TA = 25°C, with respect to GND (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT CHARGE OVER CURRENT COMPARATOR (CHG_OCP) ChargeCurrent()=0x0xxxH 54 60 66 mV Charge over current rising threshold, VOCP_RISE measure voltage drop across current ChargeCurrent()=0x1000H – 0x17C0H 80 90 100 mV sensing resistor ChargeCurrent()=0x1800 H– 0x1FC0H 110 120 130 mV CHARGE UNDER CURRENT COMPARATOR (CHG_UCP) VUCP_FALL Charge undercurrent falling threshold VSRP falling towards VSRN 1 5 9 mV LIGHT LOAD COMPARATOR (LIGHT_LOAD) VLL_FALL Light load falling threshold 1.25 mV Measure the voltage drop across current sensing resistor VLL_RISE_HYST Light load rising hysteresis 1.25 mV BATTERY DEPLETION COMPARATOR (BAT_DEPL) [1] ChargeOption() bit [12:11] = 00 55.53% 59.19% 62.84% Battery Depletion Falling Threshold, ChargeOption() bit [12:11] = 01 58.68% 62.65% 66.62% VBATDEPL_FALL percentage of voltage regulation limit, VSRN ChargeOption() bit [12:11] = 10 62.17% 66.55% 70.93% falling ChargeOption() bit [12:11] = 11 (Default) 66.06% 70.97% 75.88% ChargeOption() bit [12:11] = 00 225 305 385 mV ChargeOption() bit [12:11] = 01 240 325 410 mV Battery Depletion Rising Hysteresis, VSRN VBATDEPL_RHYST rising ChargeOption() bit [12:11] = 10 255 345 435 mV ChargeOption() bit [12:11] = 11 (Default) 280 370 460 mV Battery Depletion Rising Deglitch Delay to turn off ACFET and turn on BATFET during tBATDEPL_RDEG 600 ms (Specified by design) LEARN cycle BATTERY LOWV COMPARATOR (BAT_LOWV) VBATLV_FALL Battery LOWV falling threshold VSRN falling 2.4 2.5 2.6 V VBATLV_RHYST Battery LOWV rising hysteresis VSRN rising 200 mV IBATLV Battery LOWV charge current limit 10 m Ω current sensing resistor 0.5 A THERMAL SHUTDOWN COMPARATOR (TSHUT) TSHUT Thermal shutdown rising temperature Temperature rising 155 °C TSHUT_HYS Thermal shutdown hysteresis, falling Temperature falling 20 °C ILIM COMPARATOR VILIM_FALL ILIM as CE falling threshold VILIM falling 60 75 90 mV VILIM_RISE ILIM as CE rising threshold VILIM rising 90 105 120 mV LOGIC INPUT (SDA, SCL) VIN_ LO Input low threshold 0.8 V VIN_ HI Input high threshold 2.1 V IIN_ LEAK Input bias current V = 7 V –1 1 mA LOGIC OUTPUT OPEN DRAIN (ACOK, SDA) VOUT_ LO Output saturation voltage 5 mA drain current 500 mV IOUT_ LEAK Leakage current V = 7 V –1 1 mA ANALOG INPUT (ACDET, ILIM) IIN_ LEAK Input bias current V = 7 V –1 1 mA PWM OSCILLATOR FSW PWM switching frequency ChargeOption () bit [9] = 0 (Default) 600 750 900 kHz FSW+ PWM increase frequency ChargeOption() bit [10:9] = 11 665 885 1100 kHz FSW– PWM decrease frequency ChargeOption() bit [10:9] = 01 465 615 765 kHz BATFET GATE DRIVER (BATDRV) IBATFET BATDRV charge pump current limit 40 60 µA VBATFET Gate drive voltage on BATFET VBATDRV - VSRN when VSRN > UVLO 5.5 6.1 6.5 V Minimum load resistance between RBATDRV_LOAD 500 k Ω BATDRV and SRN RBATDRV_OFF BATDRV turn-off resistance I = 30µA 5 6.2 7.4 k Ω Copyright © 2010, Texas Instruments Incorporated Submit Documentation Feedback 7 Product Folder Link(s) :bq24725 |
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