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MTB50P03HDLT4G Datasheet(PDF) 2 Page - ON Semiconductor |
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MTB50P03HDLT4G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 9 page MTB50P03HDL http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Cpk ≥ 2.0) (Note 3) (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) V(BR)DSS 30 − − 26 − − Vdc mV/ °C Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS − − − − 1.0 10 mAdc Gate−Body Leakage Current (VGS = ±15 Vdc, VDS = 0 Vdc) IGSS − − 100 nAdc ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (Cpk ≥ 3.0) (Note 3) (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) 1.0 − 1.5 4.0 2.0 − Vdc mV/ °C Static Drain−Source On−Resistance (Cpk ≥ 3.0) (Note 3) (VGS = 5.0 Vdc, ID = 25 Adc) RDS(on) − 20.9 25 m W Drain−Source On−Voltage (VGS = 5.0 Vdc) (ID = 50 Adc) (ID = 25 Adc, TJ =125°C) VDS(on) − − 0.83 − 1.5 1.3 Vdc Forward Transconductance (VDS = 5.0 Vdc, ID = 25 Adc) gFS 15 20 − mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss − 3500 4900 pF Output Capacitance Coss − 1550 2170 Transfer Capacitance Crss − 550 770 SWITCHING CHARACTERISTICS (Note 2) Turn−On Delay Time (VDD= 15 Vdc, ID = 50 Adc, VGS = 5.0 Vdc, RG = 2.3 W) td(on) − 22 30 ns Rise Time tr − 340 466 Turn−Off Delay Time td(off) − 90 117 Fall Time tf − 218 300 Gate Charge (See Figure 8) (VDS = 24 Vdc, ID = 50 Adc, VGS = 5.0 Vdc) QT − 74 100 nC Q1 − 13.6 − Q2 − 44.8 − Q3 − 35 − SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (IS = 50 Adc, VGS = 0 Vdc) (IS = 50 Adc, VGS = 0 Vdc, TJ = 125°C) VSD − − 2.39 1.84 3.0 − Vdc Reverse Recovery Time (See Figure 15) (IS = 50 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) trr − 106 − ns ta − 58 − tb − 48 − Reverse Recovery Stored Charge QRR − 0.246 − mC INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25 ″ from package to center of die) LD − 3.5 − nH Internal Source Inductance (Measured from the source lead 0.25 ″ from package to source bond pad) LS − 7.5 − nH 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. 3. Reflects typical values. Cpk = Max limit − Typ 3 x SIGMA |
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