MTD6N20E datasheet(1/9 Pages) ONSEMI

Part #	MTD6N20E

Description	Power MOSFET 6 Amps, 200 Volts N?묬hannel DPAK

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Manufacturer	ONSEMI [ON Semiconductor]

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August, 2005 − Rev. 3

1

Publication Order Number:

MTD6N20E/D

MTD6N20E

Preferred Device

Power MOSFET

6 Amps, 200 Volts

N−Channel DPAK

This advanced Power MOSFET is designed to withstand high

energy in the avalanche and commutation modes. The new energy

efficient design also offers a drain−to−source diode with a fast

recovery time. Designed for low voltage, high speed switching

applications in power supplies, converters and PWM motor controls,

these devices are particularly well suited for bridge circuits where

diode speed and commutating safe operating areas are critical and

offer additional safety margin against unexpected voltage transients.

Features

• Avalanche Energy Specified

• Source−to−Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

• Diode is Characterized for Use in Bridge Circuits

• IDSS and VDS(on) Specified at Elevated Temperature

• Pb−Free Package is Available*

MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

200

Vdc

Drain−to−Gate Voltage (RGS = 1.0 MW)

VDGR

200

Vdc

Gate−to−Source Voltage

− Continuous

− Non−repetitive (tp ≤ 10 ms)

VGS

VGSM

± 20

± 40

Vdc

Vpk

Drain Current

− Continuous

− Continuous @ 100

°C

− Single Pulse (tp ≤ 10 ms)

ID

IDM

6.0

3.8

18

Adc

Apk

Total Power Dissipation

Derate above 25

°C

Total Power Dissipation @ TA = 25°C (Note 2)

PD

50

0.4

1.75

W

W/

°C

W

Operating and Storage Temperature Range

TJ, Tstg

−55 to

150

°C

Single Pulse Drain−to−Source Avalanche

Energy − Starting TJ = 25°C

(VDD = 80 Vdc, VGS = 10 Vdc,

IL = 6.0 Apk, L = 3.0 mH, RG = 25 W)

EAS

54

mJ

Thermal Resistance − Junction−to−Case

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

RqJC

RqJA

2.50

100

71.4

°C/W

Maximum Temperature for Soldering

Purposes, 1/8

″ from case for 10 secs

TL

260

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. When surface mounted to an FR4 board using the minimum recommended

pad size.

2. When surface mounted to an FR4 board using the 0.5 sq. in. drain pad size.

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting

Techniques Reference Manual, SOLDERRM/D.

http://onsemi.com

6 AMPERES, 200 VOLTS

RDS(on) = 460 mW

N−Channel

D

S

G

Preferred devices are recommended choices for future use

and best overall value.

1

Gate

3

Source

2

Drain

4 Drain

DPAK

CASE 369C

STYLE 2

MARKING

DIAGRAMS

6N20E Device Code

Y

= Year

WW

= Work Week

G

= Pb−Free Package

1 2

3

4

1

Gate

3

Source

2

Drain

4 Drain

DPAK

CASE 369D

STYLE 2

1

2

3

4

See detailed ordering and shipping information in the package

dimensions section on page 7 of this data sheet.

ORDERING INFORMATION

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