© Semiconductor Components Industries, LLC, 2010

February, 2010 − Rev. 5

1

Publication Order Number:

MPSW01/D

MPSW01, MPSW01A

One Watt High Current

Transistors

NPN Silicon

Features

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

MPSW01

MPSW01A

30

40

Vdc

Collector−Base Voltage

MPSW01

MPSW01A

40

50

Vdc

Emitter−Base Voltage

5.0

Vdc

Collector Current − Continuous

1000

mAdc

Derate above 25°C

1.0

8.0

W

mW/°C

Derate above 25°C

2.5

20

W

mW/°C

Operating and Storage Junction

Temperature Range

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Ambient

125

°C/W

Thermal Resistance, Junction−to−Case

50

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

http://onsemi.com

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

COLLECTOR

3

2

BASE

1

EMITTER

MARKING DIAGRAM

MPS

W01x

AYWW G

G

x

= 01A Devices

A

= Assembly Location

Y

= Year

WW = Work Week

G

= Pb−Free Package

(Note: Microdot may be in either location)

TO−92 (TO−226AE)

CASE 29−10

STYLE 1