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MMDF2P02HDR2 Datasheet(PDF) 2 Page - ON Semiconductor |
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MMDF2P02HDR2 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 8 page MMDF2P02HD http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Note 3) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) V(BR)DSS 20 − − 25 − − Vdc mV/ °C Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS − − − − 1.0 10 mAdc Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS − − 100 nAdc ON CHARACTERISTICS (Note 4) Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc) Temperature Coefficient (Negative) VGS(th) 1.0 − 1.5 4.0 2.0 − Vdc mV/ °C Static Drain−to−Source On−Resistance (VGS = 10 Vdc, ID = 2.0 Adc) (VGS = 4.5 Vdc, ID = 1.0 Adc) RDS(on) − − 0.118 0.152 0.160 0.180 W Forward Transconductance (VDS = 3.0 Vdc, ID = 1.0 Adc) gFS 2.0 3.0 − mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 16 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss − 420 588 pF Output Capacitance Coss − 290 406 Reverse Transfer Capacitance Crss − 116 232 SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time (VDS = 10 Vdc, ID = 2.0 Adc, VGS = 4.5 Vdc, RG = 6.0 W) td(on) − 19 38 ns Rise Time tr − 66 132 Turn−Off Delay Time td(off) − 25 50 Fall Time tf − 37 74 Turn−On Delay Time (VDD = 10 Vdc, ID = 2.0 Adc, VGS = 10 Vdc, RG = 6.0 W) td(on) − 11 22 Rise Time tr − 21 42 Turn−Off Delay Time td(off) − 45 90 Fall Time tf − 36 72 Gate Charge (VDS = 16 Vdc, ID = 2.0 Adc, VGS = 10 Vdc) QT − 15 20 nC Q1 − 1.2 − Q2 − 5.0 − Q3 − 4.0 − SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (Note 4) (IS = 2.0 Adc, VGS = 0 Vdc) (IS = 2.0 Adc, VGS = 0 Vdc, TJ = 125°C) VSD − − 1.5 1.24 2.1 − Vdc Reverse Recovery Time (VDD = 15 V, IS = 2.0 A, dIS/dt = 100 A/ms) trr − 38 − ns ta − 17 − tb − 21 − QRR − 0.034 − mC 3. Negative sign for P−Channel device omitted for clarity. 4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.max. 5. Switching characteristics are independent of operating junction temperature. |
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