MMBT2222AWT1 datasheet(2/6 Pages) ONSEMI

Part #	MMBT2222AWT1

Description	General Purpose Transistor NPN Silicon

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MMBT2222AWT1

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage (Note 1)

(IC = 1.0 mAdc, IB = 0)

V(BR)CEO

40

−

Vdc

Collector −Base Breakdown Voltage

(IC = 10 mAdc, IE = 0)

V(BR)CBO

75

−

Vdc

Emitter −Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

6.0

−

Vdc

Base Cutoff Current

(VCE = 60 Vdc, VEB = 3.0 Vdc)

IBL

−

20

nAdc

Collector Cutoff Current

(VCE = 60 Vdc, VEB = 3.0 Vdc)

ICEX

−

10

nAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain (Note 1)

(IC = 0.1 mAdc, VCE = 10 Vdc)

(IC = 1.0 mAdc, VCE = 10 Vdc)

(IC = 10 mAdc, VCE = 10 Vdc)

(IC = 150 mAdc, VCE = 10 Vdc)

(IC = 500 mAdc, VCE = 10 Vdc)

HFE

35

50

75

100

40

−

300

−

Collector −Emitter Saturation Voltage (Note 1)

(IC = 150 mAdc, IB = 15 mAdc)

(IC = 500 mAdc, IB = 50 mAdc)

VCE(sat)

−

0.3

1.0

Vdc

Base −Emitter Saturation Voltage (Note 1)

(IC = 150 mAdc, IB = 15 mAdc)

(IC = 500 mAdc, IB = 50 mAdc)

VBE(sat)

0.6

−

1.2

2.0

Vdc

SMALL− SIGNAL CHARACTERISTICS

Current −Gain − Bandwidth Product

(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)

fT

300

−

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cobo

−

8.0

pF

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Cibo

−

30

pF

Input Impedance

(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)

hie

0.25

1.25

k

W

Voltage Feedback Ratio

(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)

hre

−

4.0

X 10−4

Small −Signal Current Gain

(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)

hfe

75

375

−

Output Admittance

(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)

hoe

25

200

mmhos

Noise Figure

(VCE = 10 Vdc, IC = 100 mAdc, RS = 1.0 kW, f = 1.0 kHz)

NF

−

4.0

dB

SWITCHING CHARACTERISTICS

Delay Time

(VCC = 3.0 Vdc, VBE = − 0.5 Vdc,

IC = 150 mAdc, IB1 = 15 mAdc)

td

−

10

ns

Rise Time

tr

−

25

Storage Time

(VCC = 30 Vdc, IC = 150 mAdc,

IB1 = IB2 = 15 mAdc)

ts

−

225

ns

Fall Time

tf

−

60

1. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2.0%.

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