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CM1450-08CP Datasheet(PDF) 5 Page - ON Semiconductor |
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CM1450-08CP Datasheet(HTML) 5 Page - ON Semiconductor |
5 / 16 page CM1450 Rev. 2 | Page 5 of 16 | www.onsemi.com ELECTRICAL OPERATING CHARACTERISTICS (NOTE 1) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS L TOT Total Channel Inductance (L 1 + L2) 34 nH L 1, L2 Inductance 17 nH R DC IN-OUT DC Channel Resistance 18 Ω C TOT Total Channel Capacitance (C 1+ C2 + C3 ) At 2.5V DC, 1MHz, 30mV AC, Note 3 33.6 42 50.4 pF C 1, C2, C3 Capacitance At 2.5V DC, 1MHz, 30mV AC, Note 3 11.2 14 16.8 pF f C Cut-off Frequency Z SOURCE=50Ω, ZLOAD=50Ω 137 MHz f RO Roll-off Frequency at -10dB Attenuation Z SOURCE=50Ω, ZLOAD=50Ω 400 MHz V DIODE Diode Standoff Voltage I DIODE=10μA 6.0 V I LEAK Diode Leakage Current (reverse bias) V DIODE=+3.3V 0.1 1.0 μA V SIG Signal Voltage Positive Clamp Negative Clamp I LOAD = 10mA 5.6 -1.5 6.8 -0.8 9.0 -0.4 V V V ESD In-system ESD Withstand Voltage a) Human Body Model, MIL-STD-883, Method 3015 b) Contact Discharge per IEC 61000-4-2 Level 4 Note 2 ±30 ±15 kV kV R DYN Dynamic Resistance Positive Negative 2.30 0.90 Ω Ω Note 1: T A=25°C unless otherwise specified. Note 2: ESD applied to input and output pins with respect to GND, one at a time. |
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