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CM1213-06SM Datasheet(PDF) 7 Page - ON Semiconductor

Part # CM1213-06SM
Description  6 and 8-Channel Low Capacitance ESD Protection Arrays
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

CM1213-06SM Datasheet(HTML) 7 Page - ON Semiconductor

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CM1213
Rev. 3 | Page 7 of 17 | www.onsemi.com
Specifications (cont’d)
ELECTRICAL OPERATING CHARACTERISTICS
1
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
V
REV
Reverse Standoff Voltage
I
DIODE=10µA
6.0
V
I
LEAK
Leakage Current
V
IN=3.3V DC
100
nA
V
SIG
Signal Clamp Voltage
Positive Clamp
Negative Clamp
I
LOAD = 10mA
5.6
-1.2
6.8
-0.8
8.0
-0.4
V
V
V
ESD
In-system ESD Withstand Voltage
a) Human Body Model, MIL-STD-883,
Method 3015
b) Contact Discharge per IEC 61000-4-2
Level 4
Notes 2 & 3
+30
+25
kV
kV
V
CL
Clamping Voltage during ESD Discharge
MIL-STD-883 (Method 3015), 8kV
Positive Transients
Negative Transients
Notes 2 & 3
+12
-8
V
V
C
Channel Capacitance
At 2.5V DC, f = 1MHz,
Note 3
39
47
pF
Note 1: T
A=25°C unless otherwise specified. GND in this document refers to the lower supply voltage.
Note 2: ESD applied to channel pins with respect to GND, one at a time. All other channels are open. All GND pins tied to
ground.
Note 3: These parameters are guaranteed by design and characterization.


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