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CM1213-06SM Datasheet(PDF) 7 Page - ON Semiconductor |
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CM1213-06SM Datasheet(HTML) 7 Page - ON Semiconductor |
7 / 17 page CM1213 Rev. 3 | Page 7 of 17 | www.onsemi.com Specifications (cont’d) ELECTRICAL OPERATING CHARACTERISTICS 1 SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS V REV Reverse Standoff Voltage I DIODE=10µA 6.0 V I LEAK Leakage Current V IN=3.3V DC 100 nA V SIG Signal Clamp Voltage Positive Clamp Negative Clamp I LOAD = 10mA 5.6 -1.2 6.8 -0.8 8.0 -0.4 V V V ESD In-system ESD Withstand Voltage a) Human Body Model, MIL-STD-883, Method 3015 b) Contact Discharge per IEC 61000-4-2 Level 4 Notes 2 & 3 +30 +25 kV kV V CL Clamping Voltage during ESD Discharge MIL-STD-883 (Method 3015), 8kV Positive Transients Negative Transients Notes 2 & 3 +12 -8 V V C Channel Capacitance At 2.5V DC, f = 1MHz, Note 3 39 47 pF Note 1: T A=25°C unless otherwise specified. GND in this document refers to the lower supply voltage. Note 2: ESD applied to channel pins with respect to GND, one at a time. All other channels are open. All GND pins tied to ground. Note 3: These parameters are guaranteed by design and characterization. |
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