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BTB08-600BW3G Datasheet(PDF) 1 Page - ON Semiconductor

Part # BTB08-600BW3G
Description  Triacs Silicon Bidirectional Thyristors
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BTB08-600BW3G Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2008
February, 2008 - Rev. 1
1
Publication Order Number:
BTB08-600BW3/D
BTB08-600BW3G,
BTB08-800BW3G
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full‐wave ac control applications
where high noise immunity and high commutating di/dt are required.
Features
Blocking Voltage to 800 V
On‐State Current Rating of 8 Amperes RMS at 25°C
Uniform Gate Trigger Currents in Three Quadrants
High Immunity to dV/dt - 2000 V/ms minimum at 125°C
Minimizes Snubber Networks for Protection
Industry Standard TO‐220AB Package
High Commutating dI/dt - 4 A/ms minimum at 125°C
These are Pb-Free Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off-State Voltage (Note 1)
(TJ = -40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
BTB08-600BW3G
BTB08-800BW3G
VDRM,
VRRM
600
800
V
On‐State RMS Current
(Full Cycle Sine Wave, 60 Hz, TC = 80°C)
IT(RMS)
8.0
A
Peak Non‐Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
TC = 25°C)
ITSM
90
A
Circuit Fusing Consideration (t = 10 ms)
I2t
36
A2sec
Non-Repetitive Surge Peak Off-State
Voltage (TJ = 25°C, t = 10ms)
VDSM/
VRSM
VDSM/VRSM
+100
V
Peak Gate Current (TJ = 125°C, t = 20ms)
IGM
4.0
A
Peak Gate Power
(Pulse Width
≤ 1.0 ms, TC = 80°C)
PGM
20
W
Average Gate Power (TJ = 125°C)
PG(AV)
1.0
W
Operating Junction Temperature Range
TJ
-40 to +125
°C
Storage Temperature Range
Tstg
-40 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
TRIACS
8 AMPERES RMS
600 thru 800 VOLTS
TO-220AB
CASE 221A
STYLE 4
1
http://onsemi.com
BTB08-xBWG
AYWW
MARKING
DIAGRAM
x
= 6 or 8
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb-Free Package
2
3
Device
Package
Shipping
ORDERING INFORMATION
BTB08-600BW3G
TO-220AB
(Pb-Free)
50 Units / Rail
PIN ASSIGNMENT
1
2
3
Gate
Main Terminal 1
Main Terminal 2
4
Main Terminal 2
MT1
G
MT2
BTB08-800BW3G
TO-220AB
(Pb-Free)
50 Units / Rail
*For additional information on our Pb-Free strategy and
soldering details, please download the ON Semicon‐
ductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
4


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