BD234 datasheet(2/4 Pages) ONSEMI

Part #	BD234

Description	Plastic Medium Power Bipolar Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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BD237 (NPN), BD234 (PNP), BD238 (PNP)

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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Type

Min

Max

Unit

Collector−Emitter Sustaining Voltage (Note 1)

(IC = 0.1 Adc, IB = 0)

V(BR)CEO

BD237, BD238

BD234

80

45

−

Vdc

Collector Cutoff Current

(VCB = 100 Vdc, IE = 0)

(VCB = 60 Vdc, IE = 0)

ICBO

BD237, BD238

BD234

−

0.1

mAdc

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

IEBO

−

1.0

mAdc

DC Current Gain

(IC = 0.15 A, VCE = 2.0 V)

(IC = 1.0 A, VCE = 2.0 V)

hFE1

hFE2

−

40

25

−

Collector−Emitter Saturation Voltage (Note 1)

(IC = 1.0 Adc, IB = 0.1 Adc)

VCE(sat)

−

0.6

Vdc

Base−Emitter On Voltage (Note 1)

(IC = 1.0 Adc, VCE = 2.0 Vdc)

VBE(on)

−

1.3

Vdc

Current−Gain − Bandwidth Product

(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)

fT

−

3.0

−

MHz

1. Pulse Test: Pulse Width

x 300 ms, Duty Cycle x 2.0%.

Figure 1. Active Region Safe Operating Area

10

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

3

1

0.1

3

10

30

100

0.3

TJ = 150°C

dc

5 ms

1

100 ms

1 ms

BD237

BD236

The Safe Operating Area Curves indicate IC−VCE limits

below which the device will not enter secondary breakdown.

Collector load lines for specific circuits must fall within the

applicable Safe Area to avoid causing a catastrophic failure.

To

insure

operation

below

the

maximum

TJ,

power−temperature derating must be observed for both

steady state and pulse power conditions.

Figure 2. Collector Saturation Region

IB, BASE CURRENT (mA)

1.0

0

0.2

0.8

0.6

0.4

0.2

1.0

2.0

10

30

50

200

IC = 0.1 A

0.25 A

1.0 A

0.5 A

0.3

0.5

100

20

3.0

5.0

TJ = 25°C

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