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BD234 Datasheet(PDF) 2 Page - ON Semiconductor |
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BD234 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 4 page BD237 (NPN), BD234 (PNP), BD238 (PNP) http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Type Min Max Unit Collector−Emitter Sustaining Voltage (Note 1) (IC = 0.1 Adc, IB = 0) V(BR)CEO BD237, BD238 BD234 80 45 − − Vdc Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) ICBO BD237, BD238 BD234 − − 0.1 0.1 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − − 1.0 mAdc DC Current Gain (IC = 0.15 A, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) hFE1 hFE2 − − 40 25 − − − Collector−Emitter Saturation Voltage (Note 1) (IC = 1.0 Adc, IB = 0.1 Adc) VCE(sat) − − 0.6 Vdc Base−Emitter On Voltage (Note 1) (IC = 1.0 Adc, VCE = 2.0 Vdc) VBE(on) − − 1.3 Vdc Current−Gain − Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz) fT − 3.0 − MHz 1. Pulse Test: Pulse Width x 300 ms, Duty Cycle x 2.0%. Figure 1. Active Region Safe Operating Area 10 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 3 1 0.1 3 10 30 100 0.3 TJ = 150°C dc 5 ms 1 100 ms 1 ms BD237 BD236 The Safe Operating Area Curves indicate IC−VCE limits below which the device will not enter secondary breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure. To insure operation below the maximum TJ, power−temperature derating must be observed for both steady state and pulse power conditions. Figure 2. Collector Saturation Region IB, BASE CURRENT (mA) 1.0 0 0.2 0.8 0.6 0.4 0.2 1.0 2.0 10 30 50 200 IC = 0.1 A 0.25 A 1.0 A 0.5 A 0.3 0.5 100 20 3.0 5.0 TJ = 25°C |
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