ADP3212A, NCP3218A

http://onsemi.com

9

ELECTRICAL CHARACTERISTICS

Parameter

Units

Max

Typ

Min

Conditions

Symbol

HIGH−SIDE MOSFET DRIVER

Pulldown Resistance, Sinking

Current (Note 3)

BST = PVCC

0.8

2.0

W

Transition Times

15

13

35

31

ns

Dead Delay Times

BST = PVCC, Figure 2

T = −10°C to 100°C

T = −40°C to 100°C

28

32

36

50

ns

BST Quiescent Current

EN = L (Shutdown)

EN = H, no switching

1.0

200

10

mA

LOW−SIDE MOSFET DRIVER

Pullup Resistance, Sourcing

Current (Note 3)

0.88

2.8

W

Pulldown Resistance, Sinking

Current (Note 3)

0.65

1.7

W

Transition Times

15

14

35

35

ns

Propagation Delay Times

T = −10°C to 100°C

T = −40°C to 100°C

11

12

30

40

ns

SW Transition Timeout

DRVH = L, SW = 2.5 V

T = −10°C to 100°C

T = −40°C to 100°C

85

85

250

250

300

450

ns

SW Off Threshold

1.6

V

PVCC Quiescent Current

EN = L (Shutdown)

EN = H, no switching

1.0

170

10

mA

BOOTSTRAP RECTIFIER SWITCH

On Resistance (Note 3)

EN = L or EN = H and DRVL = H

5.0

7.0

12

W

1. All limits at temperature extremes are guaranteed via correlation using standard statistical quality control (SQC).

2. Guaranteed by design or bench characterization, not production tested.

3. Based on bench characterization data.

4. Timing is referenced to the 90% and 10% points, unless otherwise noted.

IN

DRVH

(WITH RESPECT TO SW)

DRVL

SW

1.0 V