ZXMS6004DT8

Document Number DS32245 Rev. 1 - 2

3 of 9

www.diodes.com

June 2010

© Diodes Incorporated

A Product Line of

Diodes Incorporated

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

LIMIT

UNIT

Continuous Drain-Source Voltage

60

V

Drain-Source Voltage for short circuit protection

36

V

Continuous Input Voltage

-0.5 ... +6

V

Continuous Input Current

-0.2V

≤V

No limit

│I

mA

Operating Temperature Range

-40 to +150

°C

Storage Temperature Range

-55 to +150

°C

Linear Derating Factor

1.16

9.28

W

mW/

°C

Linear Derating Factor

1.67

13.3

W

mW/

°C

Linear Derating Factor

2.13

17

W

mW/

°C

2

A

2.5

A

Continuous Source Current (Body Diode) (a)

1

A

Pulsed Source Current (Body Diode) (c)

5

A

Unclamped single pulse inductive energy, Tj=25

°C,

210

mJ

Electrostatic Discharge (Human Body Model)

4000

V

Charged Device Model

1000

V

THERMAL RESISTANCE

PARAMETER

SYMBOL

VALUE

UNIT

Junction to Ambient (a)(d)

108

°C/W

Junction to Ambient (a)(e)

75

°C/W

Junction to Ambient (b)(d)

58.7

°C/W

Junction to Case (f)

26.5

°C/W

NOTES

(a) For a dual device surface mounted on a 25mm x 25mm FR4 PCB single sided 1oz weight copper split

down the middle on 1.6mm FR4 board, in still air conditions.

(b) For a dual device surface mounted on FR4 PCB measured at t

≤ 10sec

(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300µs – pulse width limited by junction

temperature. Refer to transient Thermal Impedance Graph.

(d) For a dual device with one active die.

(e) For dual device with 2 active die running at equal power.

(f)

Thermal resistance from junction to solder-point (at the end of the drain lead)