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BQ24617RGET Datasheet(PDF) 7 Page - Texas Instruments |
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BQ24617RGET Datasheet(HTML) 7 Page - Texas Instruments |
7 / 33 page bq24610 bq24617 www.ti.com SLUS892 – DECEMBER 2009 ELECTRICAL CHARACTERISTICS (continued) 5.0V ≤ V(VCC) ≤ 28V, 0°C < TJ < +125°C, typical values are at TA = 25°C, with respect to GND (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT REGN REGULATOR VREGN_REG REGN regulator voltage VVCC > 10V, CE = HIGH, (0-40mA load) 5.7 6.0 6.3 V IREGN_LIM REGN current limit VREGN = 0V, VVCC > VUVLO, CE = HIGH 40 mA TTC INPUT AND SAFETY TIMER TPRECHG Precharge safety timer range(1) Precharge time before fault occurs 1440 1800 2160 sec Fast charge saftey timer range, with +/- TCHARGE Tchg = CTTC × KTTC 1 10 Hr 10% accuracy(1) Fast charge timer accuracy(1) 0.01 μF ≤ CTTC ≤ 0.11 μF –10% 10% KTTC Timer multiplier 5.6 min/nF VTTC below this threshold disables the safety timer and TTC low threshold 0.4 V termination TTC oscillator high threshold 1.5 V TTC oscillator low threshold 1 V TTC source/sink current 45 50 55 μA BATTERY SWITCH (BATFET) DRIVER RDS_BAT_OFF BATFET turn-off resistance VACN > 5V 150 Ω RDS_BAT_ON BATFET turn-on resistance VACN > 5V 20 k Ω VBATDRV_REG = VACN – VBATDRV when VACN > 5V and VBATDRV_REG BATFET drive voltage 4.2 7 V BATFET is on AC SWITCH (ACFET) DRIVER RDS_AC_OFF ACFET turn-off resistance VVCC > 5V 30 Ω RDS_AC_ON ACFET turn-on resistance VVCC > 5V 20 k Ω VACDRV_REG = VVCC – VACDRV when VVCC > 5V and VACDRV_REG ACFET drive voltage 4.2 7 V ACFET is on AC / BAT MOSFET DRIVERS TIMING Driver dead time Dead time when switching between AC and BAT 10 μs BATTERY DETECTION tWAKE Wake time Max time charge is enabled 500 ms IWAKE Wake current RSENSE = 10mΩ 50 125 200 mA tDISCHARGE Discharge time Max time discharge current is applied 1 sec IDISCHARGE Discharge current 8 mA IFAULT Fault current after a timeout fault 2 mA VWAKE Wake threshold (with-respect-to VREG) Voltage on VFB to detect battery absent during Wake 50 mV Voltage on VFB to detect battery absent during VDISCH Discharge threshold 1.55 V discharge PWM HIGH SIDE DRIVER (HIDRV) High side driver (HSD) turn-on RDS_HI_ON VBTST – VPH = 5.5 V 3.3 6 Ω resistance RDS_HI_OFF High side driver turn-off resistance VBTST – VPH = 5.5 V 1 1.3 Ω Bootstrap refresh comparator threshold VBTST_REFRESH VBTST – VPH when low side refresh pulse is requested 4.0 4.2 V voltage PWM LOW SIDE DRIVER (LODRV) RDS_LO_ON Low side driver (LSD) turn-on resistance 4.1 7 Ω RDS_LO_OFF Low side driver turn-off resistance 1 1.4 Ω (1) Verified by design Copyright © 2009, Texas Instruments Incorporated Submit Documentation Feedback 7 Product Folder Link(s): bq24610 bq24617 |
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