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DS32EL0124SQE Datasheet(PDF) 6 Page - National Semiconductor (TI) |
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DS32EL0124SQE Datasheet(HTML) 6 Page - National Semiconductor (TI) |
6 / 28 page LVCMOS Electrical Characteristics Over recommended operating supply and temperature ranges unless otherwise specified. Applies to LT_EN, GPIO0, GPIO1, GPIO2, RX_MUX_SEL, DC_B, RESET, RS, LOCK. (Note 2, Note 4, Note 5) Symbol Parameter Conditions Min Typ Max Units V IH High Level Input Voltage 2.0 V DD V V IL Low Level Input Voltage GND 0.8 V V OH High Level Output Voltage I OH = -2mA 2.7 3.2 V V OL Low Level Output Voltage I OL = 2mA 0.3V V V CL Input Clamp Voltage I CL = −18 mA -0.9 −1.5 V I IN Input Current V IN = 0.4V, 2.5V, or VDD33 -40 40 μA I OS Output Short Circuit Current V OUT = 0V (Note 6) -45 mA SMBus Electrical Specifications Over recommended operating supply and temperature ranges unless otherwise specified. (Note 2, Note 5) Symbol Parameter Conditions Min Typ Max Units V SIL Data, Clock Input Low Voltage 0.8 V V SIH Data, Clock Input High Voltage 2.1 V SDD V V SDD Nominal Bus Voltage 2.375 3.465 V I SLEAKB Input Leakage Per Bus Segment SCK and SDA pins ±200 µA I SLEAKP Input Leakage Per Pin ±10 µA C SI Capacitance for SDA and SCK 10 pF SMBus Timing Specifications Over recommended operating supply and temperature ranges unless otherwise specified. (Note 2, Note 5) Symbol Parameter Conditions Min Typ Max Units f SMB Bus Operating Frequency 10 100 kHz t BUF Bus free time between top and start condition 4.7 μs t HD:STA Hold time after (repeated) start condition. After this period, the first clock is generated 4.0 µs t SU:STA Repeated Start Condition Setup Time (Note 3) 4.7 µs t HD:DAT Data Hold Time 300 ns t SU:DAT Data Setup Time (Note 3) 250 ns t LOW Clock Low Time 4.7 µs t HIGH Clock High Time 4.0 50 µs t SU:CS SMB_CS Setup Time (Note 3) 30 ns t HS:CS SMB_CS Hold Time (Note 3) 100 ns t POR Time in which the device must be operational after power on (Note 3) 500 ms www.national.com 6 |
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