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IRFH5015PBF Datasheet(PDF) 1 Page - International Rectifier |
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IRFH5015PBF Datasheet(HTML) 1 Page - International Rectifier |
1 / 8 page 01/22/2010 IRFH5015PbF HEXFET® Power MOSFET Notes through
are on page 8 PD - 97446 www.irf.com 1 PQFN 5X6 mm Applications • Primary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • BoostConverters Note Form Quantity IRFH5015TRPBF PQFN 5mm x 6mm Tape and Reel 4000 IRFH5015TR2PBF PQFN 5mm x 6mm Tape and Reel 400 Orderable part number Package Type Standard Pack Features and Benefits Features Benefits Low RDSon (< 31 m Ω) Lower Conduction Losses Low Thermal Resistance to PCB (<0.5°C/W) Increased Power Density 100% Rg tested Increased Reliability Low Profile (<0.9 mm) results in Increased Power Density Industry-Standard Pinout ⇒ Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability VDS 150 V RDS(on) max (@VGS = 10V) 31 m Ω Qg (typical) 33 nC RG (typical) 1.7 Ω ID (@Tc(Bottom) = 25°C) 56 A Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current c PD @TA = 25°C Power Dissipation g PD @ TC(Bottom) = 25°C Power Dissipation g Linear Derating Factor g W/°C TJ Operating Junction and TSTG Storage Temperature Range V W A °C Max. 10 36 220 ± 20 150 8.2 56 -55 to + 150 3.6 0.029 250 |
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