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RJK03E5DPA Datasheet(PDF) 4 Page - Renesas Technology Corp |
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RJK03E5DPA Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page RJK03E5DPA Preliminary REJ03G1929-0210 Rev.2.10 Page 4 of 6 May 20, 2010 10 8 6 4 2 –25 0 25 50 75 100 125 150 0 8 V 25 20 15 10 5 25 50 75 100 125 150 0 50 40 30 20 10 0 0.4 0.8 1.2 1.6 2.0 010 30 20 10000 3000 1000 300 100 30 10 Crss Coss Ciss 50 40 30 20 10 0 20 16 12 8 4 20 40 60 80 100 0 0 5 V 10 V Case Temperature Tc (°C) Static Drain to Source On State Resistance vs. Temperature Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage ID = 5 A, 10 A, 20 A 5 A, 10 A, 20 A VGS = 4.5 V Pulse Test VGS = 0 f = 1 MHz Gate Charge Qg (nc) Dynamic Input Characteristics Source to Drain Voltage VSD (V) Reverse Drain Current vs. Source to Drain Voltage ID = 40 A VGS VDS VDD = 25 V 10 V VDD = 25 V 10 V Pulse Test VGS = 0, –5 V Channel Temperature Tch (°C) Maximum Avalanche Energy vs. Channel Temperature Derating IAP = 15 A VDD = 15 V duty < 0.1% Rg ≥ 50 Ω |
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