RJE0609JPD datasheet(4/7 Pages) RENESAS

Part #	RJE0609JPD

Description	Silicon P Channel MOS FET Series Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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4 / 7 page

RJE0609JPD

Preliminary

REJ03G1908-0100 Rev.1.00

Page 4 of 6

Apr 01, 2010

Case Temperature Tc (

°C)

Static Drain to Source On State Resistance

vs. Temperature

Drain Current ID (A)

Forward Transfer Admittance vs.

Drain Current

Reverse Drain Current IDR (A)

Body-Drain Diode Reverse

Recovery Time

Drain Current ID (A)

Switching Characteristics

Source to Drain Voltage VSD (V)

Reverse Drain Current vs.

Source to Drain Voltage

Drain to Source Voltage VDS (V)

Typical Capacitance vs.

Drain to Source Voltage

200

100

150

−50 −25 0

25

50

75 100 125 150

50

100

10

1

0.1

−0.1

−1

−10

VGS = −10 V

−6 V

−0.1

−0.3

−1

1000

100

10

di / dt = 100 A /

μs

VGS = 0, Ta = 25°C

−5

−4

−3

−2

−1

0

−0.4

−0.8

−1.2

−1.6

−2.0

1000

100

10

0

−10 −20 −30 −40

−60

−50

VGS = 0

f = 1 MHz

Coss

ID = −0.5 A

−1 A

−2 A

ID = −0.5 A

−1 A

−2 A

Tc =

−40°C

25

°C

150

°C

VGS = 0 V, 5 V, 10 V

−10 V

−5 V

Pulse Test

VDS = −10 V

Pulse Test

−0.1

−1

−10

tr

10

1

0.1

VGS = −10 V, VDD = −30 V

PW = 300

μs, duty ≤ 1 %

tf

td(on)

td(off)

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