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RJE0609JPD Datasheet(PDF) 4 Page - Renesas Technology Corp |
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RJE0609JPD Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page RJE0609JPD Preliminary REJ03G1908-0100 Rev.1.00 Page 4 of 6 Apr 01, 2010 Case Temperature Tc ( °C) Static Drain to Source On State Resistance vs. Temperature Drain Current ID (A) Forward Transfer Admittance vs. Drain Current Reverse Drain Current IDR (A) Body-Drain Diode Reverse Recovery Time Drain Current ID (A) Switching Characteristics Source to Drain Voltage VSD (V) Reverse Drain Current vs. Source to Drain Voltage Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage 200 100 150 −50 −25 0 25 50 75 100 125 150 50 100 10 1 0.1 −0.1 −1 −10 VGS = −10 V −6 V −0.1 −0.3 −1 1000 100 10 di / dt = 100 A / μs VGS = 0, Ta = 25°C −5 −4 −3 −2 −1 0 −0.4 −0.8 −1.2 −1.6 −2.0 1000 100 10 0 −10 −20 −30 −40 −60 −50 VGS = 0 f = 1 MHz Coss ID = −0.5 A −1 A −2 A ID = −0.5 A −1 A −2 A Tc = −40°C 25 °C 150 °C VGS = 0 V, 5 V, 10 V −10 V −5 V Pulse Test VDS = −10 V Pulse Test Pulse Test −0.1 −1 −10 tr 10 1 0.1 VGS = −10 V, VDD = −30 V PW = 300 μs, duty ≤ 1 % tf td(on) td(off) |
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