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RJK03E1DNS-00-J5 Datasheet(PDF) 4 Page - Renesas Technology Corp |
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RJK03E1DNS-00-J5 Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page RJK03E1DNS Preliminary REJ03G1903-0200 Rev.2.00 Page 4 of 6 Apr 06, 2010 20 16 12 8 4 –25 0 25 50 75 100 125 150 0 10 V 20 16 12 8 4 25 50 75 100 125 150 0 50 40 30 20 10 0 0.4 0.8 1.2 1.6 2.0 010 30 20 10000 3000 1000 300 100 30 10 Crss Coss Ciss 50 40 30 20 10 0 20 16 12 8 4 816 24 32 40 0 0 5 V 10 V Case Temperature Tc (°C) Static Drain to Source on State Resistance vs. Temperature Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage ID = 2 A, 5 A, 10 A 2 A, 5 A, 10 A VGS = 4.5 V Pulse Test VGS = 0 f = 1 MHz Gate Charge Qg (nc) Dynamic Input Characteristics Source to Drain Voltage VSD (V) Reverse Drain Current vs. Source to Drain Voltage ID = 25 A VGS VDS VDD = 25 V 10 V VDD = 25 V 10 V Pulse Test VGS = 0, –5 V Channel Temperature Tch (°C) Maximum Avalanche Energy vs. Channel Temperature Derating |
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