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PESD16VX1UL Datasheet(PDF) 3 Page - NXP Semiconductors |
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PESD16VX1UL Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 10 page PESD16VX1UL_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 16 December 2009 3 of 10 NXP Semiconductors PESD16VX1UL Ultra low capacitance unidirectional ESD protection diode [1] Device stressed with ten non-repetitive ESD pulses. [2] Measured from pin 1 to 2. Table 6. ESD maximum ratings Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Max Unit VESD electrostatic discharge voltage IEC 61000-4-2 (contact discharge) [1][2] - 8 kV MIL-STD-883 (human body model) - 10 kV Table 7. ESD standards compliance Standard Conditions IEC 61000-4-2; level 4 (ESD) > 8 kV (contact) MIL-STD-883; class 3 (human body model) > 4 kV Fig 1. 8/20 μs pulse waveform according to IEC 61000-4-5 Fig 2. ESD pulse waveform according to IEC 61000-4-2 t ( μs) 040 30 10 20 001aaa630 40 80 120 IPP (%) 0 e−t 100 % IPP; 8 μs 50 % IPP; 20 μs 001aaa631 IPP 100 % 90 % t 30 ns 60 ns 10 % tr = 0.7 ns to 1 ns |
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