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PBSS4032ND Datasheet(PDF) 9 Page - NXP Semiconductors |
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PBSS4032ND Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 14 page PBSS4032ND_1 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 30 January 2010 9 of 14 NXP Semiconductors PBSS4032ND 30 V, 3.5 A NPN low VCEsat (BISS) transistor 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. Fig 13. BISS transistor switching time definition Fig 14. Test circuit for switching times 006aaa003 IBon (100 %) IB input pulse (idealized waveform) IBoff 90 % 10 % IC (100 %) IC td ton 90 % 10 % tr output pulse (idealized waveform) tf t ts toff RC R2 R1 DUT mlb826 Vo RB (probe) 450 Ω (probe) 450 Ω oscilloscope oscilloscope VBB VI VCC |
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