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PBSS4021NT Datasheet(PDF) 8 Page - NXP Semiconductors |
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PBSS4021NT Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 14 page PBSS4021NT_1 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 31 January 2010 8 of 14 NXP Semiconductors PBSS4021NT 20 V, 4.3 A NPN low VCEsat (BISS) transistor IC/IB =20 (1) Tamb = 100 °C (2) Tamb =25 °C (3) Tamb = −55 °C Tamb =25 °C (1) IC/IB = 100 (2) IC/IB =50 (3) IC/IB =10 Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values Fig 10. Collector-emitter saturation voltage as a function of collector current; typical values IC/IB =20 (1) Tamb = 100 °C (2) Tamb =25 °C (3) Tamb = −55 °C Tamb =25 °C (1) IC/IB = 100 (2) IC/IB =50 (3) IC/IB =10 Fig 11. Collector-emitter saturation resistance as a function of collector current; typical values Fig 12. Collector-emitter saturation resistance as a function of collector current; typical values 006aac016 10−1 10−2 1 VCEsat (V) 10−3 IC (mA) 10−1 104 103 1102 10 (1) (2) (3) 006aac017 10−1 10−2 1 VCEsat (V) 10−3 IC (mA) 10−1 104 103 1102 10 (1) (2) (3) 006aac018 IC (mA) 10−1 104 103 1102 10 10−1 1 10 102 RCEsat ( Ω) 10−2 (1) (2) (3) IC (mA) 10−1 104 103 1102 10 006aac019 1 10−1 102 10 103 RCEsat ( Ω) 10−2 (1) (2) (3) |
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