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TPC8017-H Datasheet(PDF) 5 Page - Toshiba Semiconductor |
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TPC8017-H Datasheet(HTML) 5 Page - Toshiba Semiconductor |
5 / 7 page TPC8017-H 2006-11-16 5 2 0 0 40 80 120 1.2 1.6 160 0.8 0.4 (1) (2) 160 −40 0 40 80 120 −80 20 16 12 8 4 0 ID = 15A VGS = 10 V VGS = 4.5 V ID = 3.8A,7.5A,15A 3.8A,7.5A 0 0.5 1 1.5 −80 −40 0 40 80 120 160 2 0 0.1 −0.2 10 100 1000 −0.6 −0.8 −1.0 VGS = 0 V 10 4.5 1 3 −0.4 1 10 0.1 100 1000 10000 1 10 100 Ciss Coss Crss ソース接地 VGS = 0 V f = 1 MHz Ta = 25°C 0 8 24 VDD = 6 V VDS VGS 24 12 32 40 50 20 10 30 40 0 16 20 8 4 12 16 0 Drain-source voltage VDS (V) Capacitance – VDS Common source VGS = 0 V f = 1 MHz Ta = 25°C Drain-source voltage VDS (V) IDR – VDS Common source Ta = 25°C Pulse test Ambient temperature Ta (°C) Vth – Ta Common source VDS = 10 V ID = 1 mA Pulse test Ambient temperature Ta (°C) RDS (ON) – Ta Common source Pulse test Common source ID = 15 A Ta = 25°C Pulse test Total gate charge Qg (nC) Dynamic input/output characteristics 2.5 Ambient temperature Ta (°C) PD – Ta (1)Device mounted on a glass-epoxy board(a) (Note 2a) (2)Device mounted on a glass-epoxy board(b) (Note 2b) t= 10s |
Similar Part No. - TPC8017-H |
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Similar Description - TPC8017-H |
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