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TK70A06J1 Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part # TK70A06J1
Description  Switching Regualtor Application
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TK70A06J1 Datasheet(HTML) 1 Page - Toshiba Semiconductor

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TK70A06J1
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ)
TK70A06J1
Switching Regulator Application
• High-Speed switching
• Small gate charge: Qg = 87nC (typ.)
• Low drain-source ON resistance: RDS (ON) = 5.1 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 80 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 60 V)
• Enhancement-mode: Vth = 1.1~2.3 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
60
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
60
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
70
Drain current
Pulse
(Note 1)
IDP
280
A
Drain power dissipation (Tc
= 25°C)
PD
45
W
Single pulse avalanche energy
(Note 2)
EAS
751
mJ
Avalanche current
IAR
70
A
Repetitive avalanche energy (Note 3)
EAR
3.3
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability
test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
2.78
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
62.5
°C/W
Note 1: Ensure that the channel & lead temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C, L = 200 μH, IAR = 70 A, RG = 1 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
1: Gate
2: Drain
3: Source
JEDEC
-
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
1
3
2
Internal Connection


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