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TK70A06J1 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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TK70A06J1 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page TK70A06J1 2009-09-29 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ) TK70A06J1 Switching Regulator Application • High-Speed switching • Small gate charge: Qg = 87nC (typ.) • Low drain-source ON resistance: RDS (ON) = 5.1 mΩ (typ.) • High forward transfer admittance: |Yfs| = 80 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) • Enhancement-mode: Vth = 1.1~2.3 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 60 V Drain-gate voltage (RGS = 20 kΩ) VDGR 60 V Gate-source voltage VGSS ±20 V DC (Note 1) ID 70 Drain current Pulse (Note 1) IDP 280 A Drain power dissipation (Tc = 25°C) PD 45 W Single pulse avalanche energy (Note 2) EAS 751 mJ Avalanche current IAR 70 A Repetitive avalanche energy (Note 3) EAR 3.3 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 2.78 °C/W Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W Note 1: Ensure that the channel & lead temperature does not exceed 150°C. Note 2: VDD = 25 V, Tch = 25°C, L = 200 μH, IAR = 70 A, RG = 1 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature. This transistor is an electrostatic-sensitive device. Handle with care. Unit: mm 1: Gate 2: Drain 3: Source JEDEC - JEITA SC-67 TOSHIBA 2-10U1B Weight: 1.7 g (typ.) 1 3 2 Internal Connection |
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