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TK70A06J1 Datasheet(PDF) 5 Page - Toshiba Semiconductor |
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TK70A06J1 Datasheet(HTML) 5 Page - Toshiba Semiconductor |
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5 / 6 page  TK70A06J1 2009-09-29 5 EAS – Tch Channel temperature (initial) Tch (°C) −5 V 20 V IAR BVDSS VDD VDS RG = 1 Ω VDD = 25 V, L = 200 μH ⎟ ⎟ ⎠ ⎞ ⎜ ⎜ ⎝ ⎛ − ⋅ ⋅ ⋅ = VDD BVDSS BVDSS 2 I L 2 1 ΕAS Test circuit Waveform rth – tw Pulse width tw (s) 10 0.01 10μ 0.1 1 100μ 1ｍ 10ｍ 100ｍ 1 10 Duty = 0.5 0.2 0.1 SINGLE PULSE 0.05 0.02 0.01 0.001 T PDM t Duty = t/T Rth (ch-c) = 2.78°C/W 100 μs * 1 ms * 1000 0.1 10 0.1 1 100 0.01 100 10 1 ※ Single pulse Ta=25℃ Curves must be derated linearly with increase in temperature. ID max (pulse) * ID max (continuous) DC OPEATION Tc = 25°C VDSS max SAFE OPERATING AREA Drain-source voltage VDS (V) 800 600 400 200 0 25 50 75 100 125 150 1000 |
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