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TK60D08J1 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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TK60D08J1 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page TK60D08J1 2009-09-29 4 Vth − Tc RDS (ON) − Tc . IDR − VDS PD − Tc 200 50 100 150 0 0 80 40 160 120 100 0 60 40 0 40 60 20 0 20 100 1000 0.1 100 1 10 10000 80 100 0 0.4 0.8 2.0 1 3 1000 100 Common source Tc = 25°C Pulse Test 0 1 10 5 3 1.2 1.6 Ciss Coss Crss Common source VGS = 0 V f = 1 MHz Tc = 25°C 0 −80 0 40 80 120 160 −40 1 2 3 4 5 Common source VDS = 10 V ID = 1mA Pulse Test 200 Case temperature Tc (°C) Case temperature Tc (°C) Total gate charge Qg (nC) Capacitance – VDS Drain-source voltage VDS (V) Case temperature Tc (°C) Drain-source voltage VDS (V) Dynamic input / output characteristics VDD = 15V 30V 60V VDS VGS Common source ID = 60 A Ta = 25°C Pulse Test 80 20 4 8 16 12 10 300 30 0 20 8 12 −80 0 40 80 120 160 −40 16 4 ID = 60 A 30 Common source Pulse Test 15 15 60 30 VGS = 10V VGS = 4.5V |
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