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TK50P03M1 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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TK50P03M1 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 7 page TK50P03M1 2009-09-08 3 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±20 V, VDS = 0 V ⎯ ⎯ ±100 nA Drain cutoff current IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = −20 V 15 ⎯ ⎯ V Gate threshold voltage Vth VDS = 10 V, ID = 0.2 mA 1.3 ⎯ 2.3 V VGS = 4.5 V, ID = 25 A ⎯ 7.5 9.8 Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 25 A ⎯ 5.8 7.5 m Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 25 A 45 90 ⎯ S Input capacitance Ciss ⎯ 1700 ⎯ Reverse transfer capacitance Crss ⎯ 125 ⎯ Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 380 ⎯ pF Gate resistance rg VDS = 10 V, VGS = 0 V, f = 5 MHz ⎯ 1.7 ⎯ Ω Rise time tr ⎯ 20 ⎯ Turn-on time ton ⎯ 25 ⎯ Fall time tf ⎯ 22 ⎯ Switching time Turn-off time toff Duty ≤ 1%, tw = 10 μs ⎯ 64 ⎯ ns VDD ≈ 24 V, VGS = 10 V, ID = 50 A ⎯ 25.3 ⎯ Total gate charge (gate-source plus gate-drain) Qg VDD ≈ 24 V, VGS = 5 V, ID = 50 A ⎯ 13.3 ⎯ Gate-source charge 1 Qgs1 ⎯ 6.3 ⎯ Gate-drain (“Miller”) charge Qgd ⎯ 4.6 ⎯ Gate switch charge QSW VDD ≈ 24 V, VGS = 10 V, ID = 50 A ⎯ 8.2 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ 150 A Forward voltage (diode) VDSF IDR = 50 A, VGS = 0 V ⎯ ⎯ −1.2 V VDD ≈ 15 V 0 V VGS 10 V ID = 25 A VOUT |
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