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TK50P03M1 Datasheet(PDF) 5 Page - Toshiba Semiconductor |
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TK50P03M1 Datasheet(HTML) 5 Page - Toshiba Semiconductor |
5 / 7 page TK50P03M1 2009-09-08 5 0 0 10 50 40 12 4 20 VDD = 6 V VDS 24 12 20 30 50 30 20 0 40 10 VGS 8 16 0 1 1.5 2 −80 −40 0 40 80 120 160 2.5 3 0.5 Ciss Coss Crss 10 0.1 100 1000 10000 1 10 100 VGS = 0 V 10 4.5 3 0 1 −0.2 10 100 −0.6 −0.8 −0.4 1 −1.0 VGS = 10 V VGS = 4.5 V 160 −40 0 40 80 120 −80 ID = 50 A ID = 12.5, 25, 50 A 0 4 12 16 20 25 12.5 8 Drain-source voltage VDS (V) Capacitance – VDS Common source VGS = 0 V f = 1 MHz Ta = 25°C Ambient temperature Ta (°C) RDS (ON) – Ta Common source Pulse test Ambient temperature Ta (°C) Vth – Ta Common source VDS = 10 V ID = 0.2 mA Pulse test Total gate charge Qg (nC) Dynamic input/output characteristics Drain-source voltage VDS (V) IDR – VDS Common source Ta = 25°C Pulse test Common source ID = 40 A Ta = 25°C Pulse test Case temperature Tc (°C) PD – Tc 0 40 80 120 160 0 20 40 60 80 100 |
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