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TK50P03M1 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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TK50P03M1 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 7 page TK50P03M1 2009-09-08 4 VGS = 10 V 4.5 1 1 10 100 100 10 25 100 Ta = −55°C 100 0.1 1 100 10 10 0.1 1000 1 ID = 50 A 25 12.5 10 0 0.6 0.8 0 2 4 6 8 0.4 0.2 Ta = −55°C 25 100 0 1 2 3 4 5 50 30 20 0 40 10 VGS = 3.2 V 4 2 80 60 40 20 0 100 0 0.8 1.6 1.2 0.4 3.8 8 10 6 4.5 5 3.5 VGS = 2.8 V 3.3 3.7 50 30 20 0 40 10 0 0.2 0.4 0.6 0.8 1 8 10 3.5 4.5 6 5 3.1 ID – VDS ID – VDS Drain current ID (A) RDS (ON) – ID Common source Ta = 25 ℃ Pulse test Drain-source voltage VDS (V) Drain-source voltage VDS (V) Gate-source voltage VGS (V) ID – VGS Common source VDS = 10 V Pulse test Gate-source voltage VGS (V) VDS – VGS Common source Ta = 25℃ Pulse test Drain current ID (A) ⎪Yfs⎪ – ID Common source VDS = 10 V Pulse test Common source Ta = 25°C Pulse test Common source Ta = 25°C Pulse test |
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