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TK15J60U Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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TK15J60U Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page TK15J60U 2008-06-11 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ) TK15J60U Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.24Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 600 V) • Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 15 Drain current Pulse (t = 1 ms) (Note 1) IDP 30 A Drain power dissipation (Tc = 25°C) PD 170 W Single pulse avalanche energy (Note 2) EAS 81 mJ Avalanche current (Note 3) IAR 15 A Repetitive avalanche energy EAR 17 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 0.735 °C/W Thermal resistance, channel to ambient Rth (ch-a) 50 °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 0.63 mH, RG = 25Ω, IAR = 15 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. Unit: mm Ф 3.2 ± 0.2 15.9 MAX. 5.45 ± 0.2 5.45 ± 0.2 2.0 ± 0.3 1.0 1 2 3 + 0.3 − 0.25 JEDEC ⎯ JEITA SC-65 TOSHIBA 2-16C1B Weight : 4.6 g (typ.) 1 3 2 1. Gate 2. Drain(heat sink) 3. Source |
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