TK15J60U

2008-06-11

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ)

TK15J60U

Switching Regulator Applications

Characteristics

Symbol

Rating

Unit

Drain-source voltage

600

V

Gate-source voltage

±30

V

DC

(Note 1)

15

Drain current

Pulse (t

= 1 ms)

(Note 1)

30

A

Drain power dissipation (Tc

= 25°C)

170

W

Single pulse avalanche energy

(Note 2)

81

mJ

Avalanche current

(Note 3)

15

A

Repetitive avalanche energy

17

mJ

Channel temperature

150

°C

Storage temperature range

−55 to 150

°C

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability

data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

0.735

°C/W

Thermal resistance, channel to ambient

50

°C/W

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

Unit: mm

Ф

3.2

± 0.2

15.9 MAX.

5.45

± 0.2

5.45

± 0.2

2.0

± 0.3

1.0

1

2

3

＋

0.3

−

0.25

JEDEC

⎯

JEITA

SC-65

TOSHIBA

2-16C1B

Weight : 4.6 g (typ.)

1

3

2

1. Gate

2. Drain(heat sink)

3. Source