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TK10A60D Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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TK10A60D Datasheet(HTML) 4 Page - Toshiba Semiconductor |
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4 / 6 page  TK10A60D 2009-09-29 4 COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25°C 80 40 0 0 40 80 120 160 20 60 200 DRAIN-SOURCE VOLTAGE VDS (V) CAPACITANCE – VDS CASE TEMPERATURE Tc (°C) PD – Tc DRAIN-SOURCE VOLTAGE VDS (V) IDR – VDS CASE TEMPERATURE Tc (°C) Vth – Tc CASE TEMPERATURE Tc (°C) RDS (ON) – Tc TOTAL GATE CHARGE Qg (nC) DYNAMIC INPUT / OUTPUT CHARACTERISTICS 0 0.1 −0.2 1 10 100 −0.6 −0.8 −1.2 VGS = 0, −1 V 10 5 1 3 −0.4 −1.0 −1.4 COMMON SOURCE Tc = 25°C PULSE TEST 1 0.1 10 100 1000 10000 1 10 100 Ciss Coss Crss 0 1 2 3 5 −80 −40 0 40 80 120 160 4 COMMON SOURCE VDS = 10 V ID = 1 mA PULSE TEST 0 10 40 500 200 100 300 400 0 30 20 Common source ID= 10 A Tc = 25°C Pulse test 160 −40 0 40 80 120 −80 ID=10A 2.5A 5A COMMON SOURCE VGS = 10 V PULSE TEST 2.5 2.0 1.5 1.0 0.5 0 20 8 4 12 16 0 VDD = 100 V 200 VGS 400 VDS |
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