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TK6A65D Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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TK6A65D Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page TK6A65D 2009-04-09 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±30 V, VDS = 0 V ⎯ ⎯ ±1 μA Drain cut-off current IDSS VDS = 650 V, VGS = 0 V ⎯ ⎯ 10 μA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 650 ⎯ ⎯ V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 3 A ⎯ 0.95 1.11 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 3 A 1.0 4.0 ⎯ S Input capacitance Ciss ⎯ 1050 ⎯ Reverse transfer capacitance Crss ⎯ 5 ⎯ Output capacitance Coss VDS = 25 V, VGS = 0 V, f = 1 MHz ⎯ 100 ⎯ pF Rise time tr ⎯ 25 ⎯ Turn-on time ton ⎯ 60 ⎯ Fall time tf ⎯ 10 ⎯ Switching time Turn-off time toff ⎯ 75 ⎯ ns Total gate charge Qg ⎯ 20 ⎯ Gate-source charge Qgs ⎯ 13 ⎯ Gate-drain charge Qgd VDD ≈ 400 V, VGS = 10 V, ID = 6 A ⎯ 7 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 6 A Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ 24 A Forward voltage (diode) VDSF IDR = 6 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr ⎯ 1300 ⎯ ns Reverse recovery charge Qrr IDR = 6 A, VGS = 0 V, dIDR/dt = 100 A/μs ⎯ 10 ⎯ μC Marking RL = 67 Ω 0 V 10 V VGS VDD ≈ 200 V ID = 3 A VOUT 50 Ω Duty ≤ 1%, tw = 10 μs Lot No. K6A65D Part No. (or abbreviation code) Note 4 Note 4 : A line under a Lot No. identifies the indication of product Labels [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment |
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