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SSM6N44FE Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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SSM6N44FE Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 5 page SSM6N44FE 2009-05-27 4 (Q1, Q2 Common) Drain current ID (mA) ⎪Yfs⎪ – ID 1 0 10 30 1000 100 1000 10 100 3 5 50 300 500 Common Source VDS = 3 V Ta = 25°C Drain-source voltage VDS (V) IDR – VDS 0 0 100 250 −1.4 −0.4 50 150 200 −0.2 −0.6 −0.8 −1 −1.2 Common Source VGS = 0 V Ta = 25°C G D S IDR Drain current ID (mA) t – ID 10 0.1 100 300 10000 1000 100 1 10 30 50 500 3000 5000 Common Source VDD = 3 V VGS = 0 to 2.5 V Ta = 25°C tr ton tf toff Drain-Source voltage VDS (V) C – VDS 0.1 0.1 1 3 100 10 100 1 10 0.3 0.5 5 30 50 Common Source VGS = 0 V f = 1 MHz Ta = 25°C Crss Coss Ciss Ambient temperature Ta (°C) PD* – Ta *: Total rating 0 0 100 250 160 40 50 150 200 80 120 Mounted on FR4 board. (25.4 mm × 25.4 mm × 1.6mm,Cu Pad: 0.135 mm2 × 6) Drain current ID (mA) t – ID 10 0.1 100 300 10000 1000 100 1 10 30 50 500 3000 5000 Common Source VDD = 5 V VGS = 0 to 5 V Ta = 25°C tr ton tf toff |
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