SSM6L35FE datasheet(4/8 Pages) TOSHIBA

Part #	SSM6L35FE

Description	High-Speed Switching Applications Analog Switch Applications

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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4 / 8 page

SSM6L35FE

2008-03-21

4

Q1 (N-ch MOSFET)

ID – VGS

Gate–source voltage VGS (V)

02

3

1

0.01

1

1000

0.1

10

100

Ta

= 100°C

Common Source

VDS = 3 V

−25°C

25°C

ID – VDS

Drain–source voltage VDS (V)

0

200

12

1.5

0.5

100

300

400

VGS = 1.2 V

1.5 V

1.8 V

Common Source

Ta

= 25°C

4 V

10 V

2.5 V

RDS (ON) – ID

Drain current ID (mA)

VGS = 1.2 V

0

1

10

1000

10

5

100

1.5 V

Common Source

Ta

= 25°C

2.5 V

4 V

RDS (ON) – VGS

Gate–source voltage VGS (V)

04

10

8

26

0

10

5

Common Source

ID = 50 mA

25°C

Ta

= 100°C

−25°C

RDS (ON) – Ta

Ambient temperature Ta (°C)

0

10

5

−50

50

150

0

100

Common Source

2.5 V, 50 mA

4 V, 50 mA

1.5 V, 5 mA

VGS = 1.2 V, ID = 5 mA

RDS (ON) – VGS

Gate–source voltage VGS (V)

0

4

10

8

2

6

0

5

10

Common Source

ID = 5 mA

Ta

= 100°C

25°C

−25°C

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SSM6L35FE Datasheet(PDF) 4 Page - Toshiba Semiconductor

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