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SSM3J46CTB Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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SSM3J46CTB Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page SSM3J46CTB 2009-09-28 1 TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM3J46CTB ○ Power Management Switch Applications • 1.5 V drive • Low ON-resistance:Ron = 250 mΩ (max) (@VGS = -1.5 V) Ron = 178 mΩ (max) (@VGS = -1.8 V) Ron = 133 mΩ (max) (@VGS = -2.5 V) Ron = 103 mΩ (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage VDSS -20 V Gate-Source voltage VGSS ± 8 V DC ID -2.0 Drain current Pulse IDP -4.0 A Drain power dissipation PD (Note 1) 1000 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2) Marking (top view) Pin Condition (top view) Equivalent Circuit Unit: mm 1. Gate 2. Source 3. Drain CST3B JEDEC ― JEITA ― TOSHIBA 2-1T1A Weight: 1.5 mg (typ.) S V 1 2 3 Polarity mark 12 3 1. Gate 2. Source 3. Drain *Electrodes: on the bottom Polarity mark (on the top) 0.8±0.05 0.48 +0.02 -0.03 B A 1 0.70±0.03 0.25±0.03 0.45 2 3 0.05±0.03 B A 0.04 M M 0.04 B A BOTTOM VIEW |
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